Factory Lead Time  

12 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

195A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Number of Elements  

1

Power Dissipation (Max)  

375W Tc

Turn Off Delay Time  

97 ns

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

Series  

HEXFET®

Published  

2009

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature  

LOGIC LEVEL COMPATIBLE

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

375W

Case Connection  

DRAIN

Turn On Delay Time  

65 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.7m Ω @ 195A, 10V

Vgs(th) (Max) @ Id  

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

10315pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

162nC @ 4.5V

Rise Time  

827ns

Vgs (Max)  

±20V

Fall Time (Typ)  

355 ns

Continuous Drain Current (ID)  

195A

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.0017Ohm

Drain to Source Breakdown Voltage  

40V

Avalanche Energy Rating (Eas)  

255 mJ

Height  

4.572mm

Length  

10.668mm

Width  

9.65mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant